| 摘要 |
<p>PROBLEM TO BE SOLVED: To thin a film, and to prevent distortion of a mask by using the compound of Cr and Zr as the hard-mask. SOLUTION: An amorphous CrZr film 14 is etched and patterned by adapting an etching-gas method using the mixed gas of chlorine and oxygen as an etching-gas. An electron beam-resist film 16 is removed by dipping in a resist release liquid. An X-ray absorber 13 consisting of Ta is etched while employing the amorphous CrZr film 14 as the mask and patterned by a dry-etching method using chlorine gas as the etching gas. The amorphous CrZr film 14 is etched and removed by applying the dry-etching method employing the mixed gas of chlorine and oxygen or dipped in hot concentrated sulfuric acid and removed in place of dry-etching, and the mask for X-ray exposure is completed.</p> |
