Semiconducting device for memory cell

摘要

Semiconducting device for memory cell has five doping regions of two conductor type and different depths and doping concentrations in the substrate (1) with some regions formed within others of different types. The device has a region (3) of a first conductor type formed on a main surface of a semiconducting substrate (1) and containing first, second and third doping regions (6c,6b,6a) of second type with a first doping concentration at distances apart on the surface. A fourth doping region (8a) of the first type is formed within the third doping region with greater depth than the third region and a second, greater, concentration .A first gate electrode (5b) is formed on the first type surface between the second and third doping regions with an intermediate gate isolation film (4). A fifth doping region (10) of second type is formed within the first doping region with greater depth than the second doping region and a third concentration greater than the second concentration.