| 摘要 |
A method for fabricating a split gate memory cell using the self-alignment technique to reduce the amount of misalignment is disclosed. The memory cell generally comprises a floating gate for storing a charge, a select gate for selecting one or more memory cell to operate thereon, a control gate, a buried source region and a buried drain region. Due to the structure of the memory cell, there is no read disturbance when reading the memory cell and its low voltage requirement makes it suitable for low voltage applications. When placed in a memory array, each of the memory cells in the array can be individually programmed or read. In performing the erase operation, a column of information is erased.
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