发明名称 Method of fabricating a metal wiring line
摘要 A method of fabricating a metal wiring line includes providing a semiconductor substrate having a region desired for connecting with the metal wiring line, wherein a first dielectric layer is formed to cover the semiconductor substrate and a plurality of substantially parallel oxide pillars are formed on the first dielectric layer. The metal wiring line is then formed to contact the desired connecting region, and a second metal layer is then formed to contact the metal wiring line.
申请公布号 US6001732(A) 申请公布日期 1999.12.14
申请号 US19970941082 申请日期 1997.09.30
申请人 UNITED MICROELECTRONICS CORP. 发明人 HSU, CHEN-CHUNG
分类号 H01L21/768;H01L23/485;(IPC1-7):H01L21/28 主分类号 H01L21/768
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