发明名称 |
Method of fabricating a metal wiring line |
摘要 |
A method of fabricating a metal wiring line includes providing a semiconductor substrate having a region desired for connecting with the metal wiring line, wherein a first dielectric layer is formed to cover the semiconductor substrate and a plurality of substantially parallel oxide pillars are formed on the first dielectric layer. The metal wiring line is then formed to contact the desired connecting region, and a second metal layer is then formed to contact the metal wiring line.
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申请公布号 |
US6001732(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19970941082 |
申请日期 |
1997.09.30 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSU, CHEN-CHUNG |
分类号 |
H01L21/768;H01L23/485;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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