| 发明名称 |
Bidirectional power semiconductor device |
| 摘要 |
The bidirectional power semiconductor has a pair of thyristors (2) of opposite polarity that have a cathode (5), an anode (4) and a gate (6). The thyristors are switched in series and a diode (3) is coupled anti-parallel between the gates (6) to a common control terminal. The cathodes connect to an auxiliary cathode connection (14). |
| 申请公布号 |
EP0902480(A3) |
申请公布日期 |
1999.12.08 |
| 申请号 |
EP19980810771 |
申请日期 |
1998.08.11 |
| 申请人 |
ASEA BROWN BOVERI AG |
发明人 |
RAMEZANI, EZATOLLAH, DR.;WALDMEYER, JUERG, DR. |
| 分类号 |
H01L29/74;H01L25/07;H01L25/18;H01L29/747;(IPC1-7):H01L29/747 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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