| 摘要 |
PROBLEM TO BE SOLVED: To reduce or prevent the formation of black silicon by conformally depositing a protective device layer on the surface of a wafer and by patterning the layer to remove the layer from a primary chip region, then depositing a pad stack and a hard mask on the wafer, and then subjecting them to DT etching. SOLUTION: A device layer 210 is formed on a wafer. The device layer 210 conformally covers a wafer surface, including the side and the bottom of the wafer. At least the edge and side of the wafer, where black silicon is produced, is protected, whereas a region 208 on which an IC is formed is not protected. A supporter 205 like a shadow ring is used to protect the edge of the wafer. The unprotected portion of the TEOS layer 210 in a primary chip region 208 is selectively removed from the wafer. A pad stack is formed, and then a hard mask layer 260 is deposited. The pad stack is patterned and then is subjected to a DT etching to form a DT. |
