发明名称 |
A charged particle beam exposure method and an apparatus therefor |
摘要 |
<p>A charged particle beam exposure method, wherein a charged particle beam is shaped based on pattern data and the shaped charged particle beam is irradiated to a desired location on a sample, the method comprises the steps of: introducing ozone gas into a chamber through which the charged particle beam is passed, shaped and deflected so as to be irradiated to the desired location; and maintaining the ozone gas concentration in the chamber so that the concentration downstream along the beam is higher than the concentration upstream along the beam. A charge-up drift due to a contamination material from a resist on a wafer can be avoided by the ozone self cleaning. The ozone oxidation does not occure at the upstream chamber where lower ozone consentration but lower contamination. <IMAGE></p> |
申请公布号 |
EP0797236(A3) |
申请公布日期 |
1999.11.24 |
申请号 |
EP19970301824 |
申请日期 |
1997.03.18 |
申请人 |
FUJITSU LIMITED;ADVANTEST CORPORATION |
发明人 |
OOAE,YOSHIHISA;YAMADA, AKIO;YASUDA, HIROSHI;TANAKA, HITOSHI |
分类号 |
H01J37/06;H01J37/30;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01J37/30;H01J37/302;H01J37/07 |
主分类号 |
H01J37/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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