| 摘要 |
A semiconductor device comprises a first semiconductor layer formed of a Group III-V semiconductor layer or a II-VI semiconductor layer; and a second semiconductor layer formed of a Group IV semiconductor layer or a Group II-VI semiconductor layer which is different material from the first semiconductor layer and formed in heterojunction with the first semiconductor layer, a junction interface between the first semiconductor layer and the second semiconductor layer being {001} or {111} plane, and a two-dimensional carrier gas being generated in the heterojunction interface.
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