| 摘要 |
PROBLEM TO BE SOLVED: To substantially suppress the increase in interconnection capacity by forming, in a dielectric film having a specific permittivity of a specified value or below, an interconnection layer so that the upper face of it may be higher than that of the dielectric film. SOLUTION: On a semiconductor substrate 1, the source region and the drain region are formed in an isolation region constituted of a silicon oxide film 2, and then a gate electrode 4 made of polysilicon is formed at the center of the substrate 1 through a gate oxide film 3. On the gate electrode 4, an interlayer insulating film 5 constituted of a low permittivity film having a value of 3.0 or below for the specific permittivity is formed. Then, in the interlayer insulating film, an aluminum interconnection layer 6 is formed. At that time, the upper layer of the interconnection layer 6 is made a slightly higher than that of the interlayer insulating film 5 for the purpose of removing an oxide film. As a result of this method, the increase in the interconnection capacity can be substantially suppressed. |
