发明名称 WAFER PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the quantity of a chemical exhausted with an atmosphere in a process chamber by suppressing leakage of an atmosphere through an opening opened to the outside of the process chamber. SOLUTION: A wafer processing device is provided with a peeling processing chamber 10, an exhaust pipe 12 including an exhaust damper 13, an exhaust damper control part. The peeling processing chamber 10 has an entrance 10a or an exit 10b for loading or unloading a wafer. The exhaust pipe 12 is used to exhaust the atmosphere in the peeling processing chamber 10. The exhaust damper control part adjusts the exhausted quantity of the atmosphere in the peeling processing chamber 10 so that the atmosphere may not leak into an adjacent processing chamber 20, 30 through the entrance 10a or the exit 10b.
申请公布号 JPH11307499(A) 申请公布日期 1999.11.05
申请号 JP19980115179 申请日期 1998.04.24
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 OGASAWARA MITSUO;TANIGUCHI TAKESHI;YANAGISAWA NOBUO
分类号 G03F7/30;B08B3/08;H01L21/027;H01L21/304;H01L21/306;H01L21/677;H01L21/68;(IPC1-7):H01L21/304 主分类号 G03F7/30
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