| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photodiode which can be integrated on a semiconductor substrate together with a receiver circuit by bonding diffused parts of a doped substrate, the diffusion parts being doped with other dopant with a plurality of connection trances laid on a plane. SOLUTION: An integrated receiver and photodiode 300 are constructed by forming a p-n junction of the photodiode, using n-type diffusion dots 332 mutually distance and connected through connection traces 334, the many diffusion dots 332A, 332B, 332C are formed with regular spacings on a p-type substrate 210, the n-type diffusion parts are formed with dots of minimum sizes of the uniform spacings thereof and interconnected with minimum capacitances. All the n-type diffused dots are connected so as to form the photodiode 330 through interconnection lines 334. |
