| 摘要 |
PURPOSE:To reduce the capacitance of an electrode pad by a method wherein an insulating film has a thick part and a thin part and the electrode pad is formed on the thick part. CONSTITUTION:A silicon oxide film 12 is deposited on a silicon substrate 11; the silicon oxide film 12 in a part where an electrode pad is to be formed is etched and removed by the use of a resist 14 as a mask; the resist 14 is removed; the silicon oxide film 12 is left in the part where the electrode pad is to be formed. Then, a silicon oxide film 12' is formed; the silicon oxide film 12' having a thick part 12a and a thin part 12b is obtained. Then, a circuit element such as a transistor or the like is formed in a region of the thin part 12b of the silicon oxide film 12'; the electrode part 16 is formed on the thick part 12a. Thereby, it is possible to reduce the capacitance between the electrode pad 16 and the semiconductor substrate 11. |
