FERROELECTRIC THIN FILM AND MANUFACTURE THEREOF AND MANUFACTURE OF FERROELECTRIC THIN FILM ELEMENT AND SUBSTRATE COATED THEREWITH

摘要

PROBLEM TO BE SOLVED: To prevent the damage of a ferroelectric thin film itself in an etching process or the like, by selectively forming a ferroelectric thin film only in a desired area on a semiconductor substrate. SOLUTION: An insulator buffer layer 4 is preliminarily formed in a desired shape on the surface of a semiconductor substrate 1, and then a Bi system layer-shaped oxide thin film 5 is formed on the whole face of the semiconductor substrate 1 including the insulator buffer layer 4. Thus, the Bi system-shaped oxide thin film is selectively crystallized only on the insulator buffer layer 4 so that a ferroelectric thin film 5a can be formed.