| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce deterioration of a characteristic of internal cells of a non- volatile memory caused by rewriting data. SOLUTION: In a state in which a logic value '0' is set to a register 15, when address specification is performed for a data region of a flash memory 6 conforming to decoded results of address data A0-A15, a writing signal PRO GRAM is generated for a time T2 being shorter than an ordinary time T1. And a N channel type MOS transistor 9 is turned on for a time T2, and high voltage VP is supplied to a memory cell of a data region of a flash memory 6 for a time T2.</p> |
