发明名称 RESIST DEVELOPMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a resist development device capable of preventing development defects due to the ejection amount insufficiency of a developer and preventing the generation of large amounts of the development defects. SOLUTION: A developer supply unit 1 is provided with a developer can 11, a trap tank 12, a developer residual amount sensor 13, an N2 pressure sensor 14 and a developer residual amount/N2 pressure detection circuit 15. An N2 supply line 16 is connected to the developer can 11 and the N2 pressure sensor 14 is provided on a part branched into a T shape in the middle. When the developer is less than a height of 100 mm from the bottom of the trap tank 12 or when the compression pressure of N2 gas inside the N2 supply line 16 is equal to or higher than, 0.1 MPa or equal to or less than 0.15 MPa, the developer residual amount sensor 13 or the N2 pressure sensor 14 supplies the signals of a low level to the developer redisual amount/N2 pressure detection circuit 15. The developer residual amount/N2 pressure detection circuit 15 outputs the signals of the low level and inputs them to the control part of this resist development device. The control part stops the ejection of the developer by having the development part stop and stops the carriage to the development part of a semiconductor wafer by having a loader part stop.
申请公布号 JPH11283907(A) 申请公布日期 1999.10.15
申请号 JP19980085909 申请日期 1998.03.31
申请人 SONY CORP 发明人 ETO SUMIO
分类号 H01L21/027;G03F7/30;(IPC1-7):H01L21/027 主分类号 H01L21/027
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