发明名称 MANUFACTURING METHOD OF THIN-FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To allow a pixel electrode to be positively brought into contact with a drain electrode via the contact hole of an interlayer insulation which is made of transparent resin by treating the surface of a substrate containing the surface of the drain electrode of a lower part exposed to the contact hole for cleaning the surface of a contact part. SOLUTION: A TFT is formed, and a photosensitive acryl-family transparent resin is used for forming an insulating film 10 to eliminate a step part for planarization of a surface. Then, a contact hole 11 is formed so that one part of the surface of a drain electrode is exposed through exposure and development treatment. At this time, a foreign object that is in a granular shape or in a uniform thin film state remains as a residue on the surface of the opening part of the contact hole 11. In this case, for almost all the residues, an interlayer insulation 10 is used as a main constituent. After that, the entire surface including the contact hole 11 is removed of the residues by surface treating, thus a pixel electrode 13 is formed.</p>
申请公布号 JPH11283934(A) 申请公布日期 1999.10.15
申请号 JP19980086291 申请日期 1998.03.31
申请人 MITSUBISHI ELECTRIC CORP 发明人 INOUE KAZUNORI;AOKI OSAMU;KUMAGAI MUNEHITO;NOMI SHIGEAKI;TAKEGUCHI TORU
分类号 H01L29/786;G02F1/136;G02F1/1368;H01L21/28;H01L21/336;(IPC1-7):H01L21/28 主分类号 H01L29/786
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