发明名称 |
Method for detecting defect sizes in polysilicon and source-drain semiconductor devices |
摘要 |
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.
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申请公布号 |
US5963780(A) |
申请公布日期 |
1999.10.05 |
申请号 |
US19970899739 |
申请日期 |
1997.07.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LING, ZHI-MIN;LIN, YUNG-TAO;SHIAU, YING |
分类号 |
H01L23/544;(IPC1-7):H01L21/66;G01R31/26 |
主分类号 |
H01L23/544 |
代理机构 |
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地址 |
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