发明名称 Semiconductor integrated device and method of providing shield interconnection therein
摘要 A method of providing shield interconnection, the method shielding an interconnection pattern to be shielded with shield interconnection patterns for shielding on the substrate of a semiconductor integrated device, is disclosed. The method includes the steps of disposing multiple interconnection layers having the corresponding shield interconnection patterns formed therein so that the interconnection layers surround the interconnection pattern to be shielded; setting different potentials for at least a first one of the shield interconnection patterns formed in a first one of the interconnection layers and a second one of the shield interconnection patterns formed in a second one of the interconnection layers; and shielding the interconnection pattern to be shielded with the first one and the second one of the shield interconnection patterns.
申请公布号 US2006192288(A1) 申请公布日期 2006.08.31
申请号 US20060344191 申请日期 2006.02.01
申请人 UENO TSUYOSHI 发明人 UENO TSUYOSHI
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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