| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a product of which composition control is easy and making film repeatability is superior, by supplying a first family element and a third family element from a sputtering target, and by supplying a fourth family element from an evaporating source selected from Se and S and made of more than one kind. SOLUTION: Three target equipping devices 1a, 1b and 1c are equipped with each Cu target 31, Cu/Ga target 32 and In target 33 in order as sputtering targets. A melting pot 2 is equipped with Se 34 as an evaporating source. A glass substrate as a substrate on which an Mo film is formed is assembled on a substrate holder. While predetermined electric powers are impressed to the three sputtering targets from each electric power source, each target of Cu 31, Cu/Ga 32 and In 33 is made sputtering. The Se evaporating source 34 is heated over a temperature higher than the Se boiling point by a heater. A composition ratio of each element during film making is regulated by a power which is impressed to each target.</p> |
