发明名称 |
Methods of forming thin film transistors |
摘要 |
A method of forming film transistor includes, a) forming a thin film transistor layer of semiconductive material; b) providing a gate operatively adjacent the thin film transistor layer; c) forming at least one electrically conductive sidewall spacer over at least one lateral edge of the gate, the spacer being electrically continuous therewith; and d) providing a source region, a drain region, a drain offset region, and a channel region in the thin film transistor layer; the drain offset region being positioned operatively adjacent the one electrically conductive sidewall spacer and being gated thereby. The spacer is formed by anisotropically etching a spacer forming layer.
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申请公布号 |
US5953596(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19960769652 |
申请日期 |
1996.12.19 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BATRA, SHUBNEESH;MANNING, MONTE;BANERJEE, SANJAY;JUNG, LETIEN |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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