In-line test of contact opening of semiconductor device

摘要

A method for testing a contact opening of a semiconductor device includes the steps of: inspecting a wafer using an in-line scanning electron microscope, comparing a contrast difference of contact opening regions displayed on the scanning electron microscope, and determining whether the processes for forming the contact openings have been performed correctly based on results of the comparison step. The test method may be performed after any of a contact photolithography process, contact etching process, or conductive layer etching process.