发明名称 Method and apparatus for the fabrication of semiconductor photomask
摘要 The present invention provides a method and apparatus of fabricating photomasks. The photomasks may be fabricated from a photomask blank structure having multiple layers. Upon patterning of these multiple layers by standard photolithographic processes, a photomask is created which is capable of phase-shifting incident light by various degrees, which may be 0 DEG , 60 DEG , 120 DEG , and 180 DEG .
申请公布号 US5935740(A) 申请公布日期 1999.08.10
申请号 US19980177691 申请日期 1998.10.22
申请人 MICRON TECHNOLOGY, INC. 发明人 PIERRAT, CHRISTOPHE
分类号 G03F1/00;(IPC1-7):G03F9/00 主分类号 G03F1/00
代理机构 代理人
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