Method of fabricating submicron FETs with low temperature group III-V material

摘要

A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300 DEG C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200 DEG C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400 DEG C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.