| 摘要 |
PROBLEM TO BE SOLVED: To improve the light extract efficiency of the semiconductor light- emitting device of a blue light-emitting diode by forming a taper part from the surface of a SiC semiconductor or a GaN system semiconductor toward a substrate-side to a position exceeding a light-emitting layer. SOLUTION: An n-type SiC epitaxial layer 2 and a p-type SiC epitaxial layer 3 are formed sequentially on one main face of an n-type SiC semiconductor substrate 1. Then, the selection mask pattern 4 of RIE is formed on the p-type SiC epitaxial layer 3. At that time, a proximity exposure processing is executed, and the mask pattern 4 having a taper form is formed. The processing of RIE 6 is executed and the p-type SiC epitaxial layer 3 and the n-type SiC epitaxial layer 2 are etched. Thus, the taper part is formed to the part of the n-type SiC epitaxial layer 2 which becomes a light-emitting layer by exceeding the p-type SiC epitaxial layer 3 by the RIE processing. A GaN system semiconductor may be used in place of the SiC semiconductor. |
