| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering device for making the compositional ratio of a silicide film formed by sputtering constant and to provide a sputtering method. SOLUTION: Both sides of an Si target 1 are provided with W targets 2a and 2b fitted to rods 10a and 10b for rotating a target, and while the inclined angleαof the W targets 2a and 2b is varied within the range of the angle of tan<-1> (b/L)<=α<=tan<-1> (a+b)/L}, sputtering is executed. In this way, the radiation angle of high m.p. metal and Si atoms in a silicide film is corrected, and the compositional ratio of the silicide film formed on the flat part in the stage error on a semiconductor substrate 8 and the compositional ratio of the side wall part in the stage error can be made equal to prevent deterioration in its chemcal resistance and the peeling of the film caused by the difference in the compositional ratio.
|
