发明名称 OPTO-ELECTRONICAL COMPONENT FOR THE INFRARED WAVELENGTH RANGE
摘要 A silicon-based, IC-compatible luminescent diode (LED) or laser diode (LD) has a light-emitting layer based on semiconductor ruthenium silicide (Ru2Si3) on silicon for the near infrared wavelength range around 1.5 mu m. This component has an epitaxial Si/Ru2Si3Si or Si/Ru2Si3 heterostructure with band discontinuities of more than 0.05 eV for electrons or holes in order to achieve charge carrier confinement and thus an efficient light yield at room temperature.
申请公布号 WO9930372(A3) 申请公布日期 1999.07.29
申请号 WO1998DE03641 申请日期 1998.12.11
申请人 FORSCHUNGSZENTRUM JUELICH GMBH;MANTL, SIEGFRIED;LENSSEN, DANIEL;BAY, HELGE 发明人 MANTL, SIEGFRIED;LENSSEN, DANIEL;BAY, HELGE
分类号 H01L31/032;H01L31/103;H01L31/105;H01L33/00;H01L33/26;H01S5/32;H01S5/34 主分类号 H01L31/032
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