发明名称 |
OPTO-ELECTRONICAL COMPONENT FOR THE INFRARED WAVELENGTH RANGE |
摘要 |
A silicon-based, IC-compatible luminescent diode (LED) or laser diode (LD) has a light-emitting layer based on semiconductor ruthenium silicide (Ru2Si3) on silicon for the near infrared wavelength range around 1.5 mu m. This component has an epitaxial Si/Ru2Si3Si or Si/Ru2Si3 heterostructure with band discontinuities of more than 0.05 eV for electrons or holes in order to achieve charge carrier confinement and thus an efficient light yield at room temperature. |
申请公布号 |
WO9930372(A3) |
申请公布日期 |
1999.07.29 |
申请号 |
WO1998DE03641 |
申请日期 |
1998.12.11 |
申请人 |
FORSCHUNGSZENTRUM JUELICH GMBH;MANTL, SIEGFRIED;LENSSEN, DANIEL;BAY, HELGE |
发明人 |
MANTL, SIEGFRIED;LENSSEN, DANIEL;BAY, HELGE |
分类号 |
H01L31/032;H01L31/103;H01L31/105;H01L33/00;H01L33/26;H01S5/32;H01S5/34 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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