| 摘要 |
PROBLEM TO BE SOLVED: To increase capacitor efficiently by covering an entire surface of a storage nodes arranged at an interval with a capacitor insulating film, and providing a cell plate, comprising an insulating layer filled in the inner space of the storage node and a conducting layer as the upper layer on the above described conducting layer, thereby increasing storage node. SOLUTION: A contact hole 10a is formed on an interlayer insulating film 10 on a semiconductor element by etching. Polysilicon is embedded, and a contact plug 12 is formed. Furthermore, a polysilicon layer 14 for the first storage is formed. Then, the layer is grown randomly, and a rough surface polysilicon 16 is formed. Then, the semiconductor element is heated, and a silicon oxide film 18 is formed. Thereafter, etch back is performed, and the upper surface of the rough surface silicon 16 is exposed. A remaining NGS film 18a forms a polysilicon layer 20 for the second storage node on the upper layer of the rough surface silicon 16. Then, pattering is performed, a cell plate 24 is formed, and the capacitor is obtained. |
