发明名称 PLASMA DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma device capable of lowering a downtime of treatment in the device and increasing an efficiency of wafer transferring. SOLUTION: This plasma device conducting a plasma treatment on a wafer comprises a supplying stage 2 holding carrier, a buffer device 4 temporarily storing the wafer, a reacting chamber 6 conducting plasma treatment on the wafer, a first transferring arm 3 located between the supplying stage 2 and the buffer device 4, and a second transferring arm 5 located between the buffer device 4 and the reacting chamber 6. The buffer device 4 comprises a pair of boat units 41 respectively receiving wafers and rotatable around an vertical axis located in the middle between the boat units. One boat unit 41 of the buffer device 4, the second transferring arm 5, and at least one opening of the reactive chamber 6 are contained in a load lock chamber 7 subject to decompression.
申请公布号 JPH11195689(A) 申请公布日期 1999.07.21
申请号 JP19970367651 申请日期 1997.12.26
申请人 MC ELECTRONICS KK 发明人 OSADA ATSUSHI
分类号 H05H1/46;C23C16/44;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H01L21/677;H01L21/68;(IPC1-7):H01L21/68;H01L21/306 主分类号 H05H1/46
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