发明名称 NANOSTRUCTURES
摘要 The invention relates to nanometric structuring and decorating of substrates. The invention especially relates to surface decorated substrates on which ordered nanometric surface structures are deposited, said structures being comprised of metal and/or metal oxide clusters and/or semiconductor clusters. The invention also relates to a method for producing and applying said surface decorated structures in order to epoxidize C3-C8-alkenes or to oxidize CO to CO2, and relates to surface structured substrates, especially Pt, Au, GaAs, InyGaAs, AlxGaAs, Si, SiO2, Ge, SixNy, SixGaAs, InP, InPSi, GaInAsP, glass, graphite, diamond, mica, SrTiO3 or the doped modifications thereof, which are nanometrically structured over macroscopic areas. In addition, the invention relates to a method for the production of said surface structured substrates. The invention is based on the film formation of core shell polymer systems whose core areas are selectively modified or charged with corresponding metal compounds in a solution and construct the structures which are orderly arranged in the thin films. These films which are deposited on the substrate surfaces are selectively etched in such a way that the organic polymer components are completely removed and, as a result, the substrate is decorated in an orderly arrangement by the inorganic residues. The structured films can further serve as masks which make it possible to selectively etch the substrate and to transfer such a structure, said structure given by the film, to the substrate.
申请公布号 WO9921652(A3) 申请公布日期 1999.07.15
申请号 WO1998EP06874 申请日期 1998.10.29
申请人 UNIVERSITAET ULM;SPATZ, JOACHIM;MOELLER, MARTIN;HERZOG, THOMAS;MOESSMER, STEFAN;ZIEMANN, PAUL 发明人 SPATZ, JOACHIM;MOELLER, MARTIN;HERZOG, THOMAS;MOESSMER, STEFAN;ZIEMANN, PAUL
分类号 B82B1/00;B01J23/38;B01J37/00;B82B3/00;H01L21/20;H01L21/288;H01L21/311;H01L21/316;H01L21/318;H01L21/3213;H01M8/06 主分类号 B82B1/00
代理机构 代理人
主权项
地址