发明名称 ELECTRODE STRUCTURE FOR VAPOR DEPOSITION, DEVICE FOR VAPOR DEPOSITION, METHOD OF VAPOR DEPOSITION AND PRODUCTION OF ORGANIC LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a vapor deposition film free from defects and excellent in flatness by winding wire meshes made of a high m.p. material in multistage on the periphery of a vapor deposition materia, heating the vapor deposition materia by applying current to the wire mesh to evaporate the vapor deposition material with uniform heating and to prevent the incorporation of impurities by the wire mesh. SOLUTION: Plural pieces of the wire meshes 12 are laminated and wound on the periphery of the vapor deposition 11 and current is applied to the wire meshes 12 through an electrode 13. Then the wire meshes 12 generate heat to uniformly heat the vapor deposition material 11 to effectively sublime and to prevent the scattering of the impurities with the wire mesh. The wire mesh 12 has 10-200μmesh size, is preferably made of a material such as W, Ta, Mo, Pt, Ni or the alloy and if necessary an insulating or high resistant shielding plate is mounted to restrict the scattering direction of the vapor deposition material. As the vapor deposition material a material not intimate with the wire mesh, e.g. a sublimable metal, a metal oxide or the like, or a material intimate with the wire mesh, e.g. Mg, Li, In, Ca or the like is used.
申请公布号 JPH11189865(A) 申请公布日期 1999.07.13
申请号 JP19970359372 申请日期 1997.12.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INABA RITSUO;MATSUO MIKIKO;KISHIMOTO YOSHIO
分类号 H05B33/10;C23C14/26;H01L51/50;H05B33/12;H05B33/14;(IPC1-7):C23C14/26 主分类号 H05B33/10
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