发明名称 |
Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same |
摘要 |
A memory cell array of a non-volatile semiconductor memory device includes unit strings grouped into first strings belonging to a first string group and second strings belonging to a second string group. Each unit string has a memory cells for storing data in a non-volatile state. Each first string is coupled between an associated bit line of a first bit line group and a first common source line whereas each second string is coupled between an associated bit line of a second bit line group and a second common source line. The bit lines and the common source lines are made of different conductive layers. In accordance with the invention, it is possible to achieve a less critical layout of sense amplifiers coupled to bit lines while easily performing a photolithography process as required in the manufacture of the memory device.
|
申请公布号 |
US5923587(A) |
申请公布日期 |
1999.07.13 |
申请号 |
US19970932452 |
申请日期 |
1997.09.18 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
CHOI, JUNG-DAL |
分类号 |
H01L21/8247;G11C11/56;G11C16/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|