| 摘要 |
PROBLEM TO BE SOLVED: To manufacture, with good yield, a ferroelectric capacitor of superior ferroelectric characteristics and nonvolatile semiconductor storage device of a stack-type structure comprising the ferroelectric capacitor. SOLUTION: On a lower part Pt electrode 4 formed on a silicon substrate 1 through a thermal-oxidation film 2 and a TiO2 adherence layer 3, an SrBi2 Ta2 O9 film 7 which is a ferroelectric film is formed. Then, through thermal process at 650-800 deg.C in a nitrogen atmosphere which is an inert gas, the ferroelectric film is crystallized. Then, an upper part Pt electrode 6 is formed on the ferroelectric film. |
