Dünneroxydefilm mit Quarz-Kristall Struktur und Verfahren zu seiner Herstellung

摘要

An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 mu m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof. $$