| 发明名称 |
Apparatus for fabricating semiconductor device and method for fabricating semiconductor device |
| 摘要 |
A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.
|
| 申请公布号 |
US5919336(A) |
申请公布日期 |
1999.07.06 |
| 申请号 |
US19970971569 |
申请日期 |
1997.11.17 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KIKUCHI, JUN;FUJIMURA, SHUZO;IGA, MASAO |
| 分类号 |
C23F4/00;C23G5/00;H01J37/32;H01L21/02;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;(IPC1-7):B65C3/26 |
主分类号 |
C23F4/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
