Mfr. technique for conducting elements within integrated circuit

摘要

the deposition method enables formation of the conducting elements without need for polishing. The procedure for forming conducting elements within an integrated circuit comprises the stage of depositing a first dielectric layer (14) on a substrate (10). A first conducting layer (16) is then deposited upon this dielectric, and a second dielectric layer (18) is deposited on top of the conducting layer. Cavities (20) are formed, extending at least part way through the first dielectric layer. A second conductive layer is then formed on the internal surfaces of the cavities. Finally a further conducting material (26) is deposited electrolytically within the cavities.