METHOD OF FABRICATING AN ENTIRELY SELFALIGNED THIN FILM TRANSISTOR USING A LASER,申请号KR19950061851-传众专利搜索

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发明名称	METHOD OF FABRICATING AN ENTIRELY SELFALIGNED THIN FILM TRANSISTOR USING A LASER
摘要
申请公布号	KR100200350(B1)	申请公布日期	1999.07.01
申请号	KR19950061851	申请日期	1995.12.28
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	PARK, WOON-YONG;CHOI, SI-WON
分类号	H01L29/786;(IPC1-7):H01L29/786	主分类号	H01L29/786
代理机构		代理人
主权项
地址

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