| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for forming a fine pattern. SOLUTION: In a manufacturing method of the semiconductor device for coating a material to be worked 1 with chemical amplifying positive resist 2 which consists of resin, a protective group and an acid generation agent and for executing patterning, a chemical amplifying positive resist 2 is patterned, and a preliminary resist pattern 12 is formed. Then, second ultraviolet rays 13 are irradiated, the protective group in the chemical amplifying positive resist 2 is extracted, the pattern of the preliminary resist pattern 12 is contracted, and the resist pattern is obtained. |
