| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element of a structure, wherein the characteristics of the element can be raised and the life of the element can be made to extend, and an optical device. SOLUTION: An n-type clad layer 2, an active layer 3 and a p-type clad layer 4 are laminated in order on a substrate 1 consisting of an n-type GaP layer. The layer 2 is constituted of an n-type ZnBeSSe mixed crystal, the layer 3 is constituted of a ZnOSSe mixed crystal and the layer 4 is constituted of a p-type ZnBeSSe mixed crystal. As the layer 3 contains O and the layers 2 and 4 contain Be, the grating constants in the layers 3, 2 and 4 and the band gaps in the layers 3, 2 and 4 can be selected from a wide range. As a result, the layer 3 can be constituted in such a way as not to have a strain. Moreover, as the layer 4 contains the Be, the carrier concentration in the layer 4 can be made high. |
