PHOTORESIST WASHING STRIPPER

摘要

PROBLEM TO BE SOLVED: To obtain a photoresist washing stripper capable of satisfactorily dissolving even a film deposited on a side wall in reactive ion etching or other method and a photoresist highly degenerated by ion implantation. SOLUTION: The photoresist washing stripper consists of 5-30 wt.% monoethanolamine and 70-95 wt.% dimethylformamide and suitably contains <=2 wt.% nonionic surfactant. The stripper has very high photoresist dissolving power and exhibits superior stripping capability even to a film deposited on a side wall in reactive ion etching or other method and a photoresist degenerated by ion implantation.