发明名称 |
Method for testing semiconductor element |
摘要 |
An apparatus of testing a semiconductor element applies pulsed voltages synchronized with each other, respectively, to a gate and a drain of a semiconductor element being tested and measures current flowing through the semiconductor element in response to the pulsed voltages thus applied. The testing apparatus produces pulsed I-V characteristics considering the influences of self heating and surface energy levels of the semiconductor element and RF swing along a load line during large signal operation.
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申请公布号 |
US5905384(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19970779363 |
申请日期 |
1997.01.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
INOUE, AKIRA;NAKAJIMA, YASUHARU;OHTA, YUKIO;MATSUBAYASHI, HIROTO |
分类号 |
G01R31/26;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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