发明名称 Method for testing semiconductor element
摘要 An apparatus of testing a semiconductor element applies pulsed voltages synchronized with each other, respectively, to a gate and a drain of a semiconductor element being tested and measures current flowing through the semiconductor element in response to the pulsed voltages thus applied. The testing apparatus produces pulsed I-V characteristics considering the influences of self heating and surface energy levels of the semiconductor element and RF swing along a load line during large signal operation.
申请公布号 US5905384(A) 申请公布日期 1999.05.18
申请号 US19970779363 申请日期 1997.01.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 INOUE, AKIRA;NAKAJIMA, YASUHARU;OHTA, YUKIO;MATSUBAYASHI, HIROTO
分类号 G01R31/26;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
代理机构 代理人
主权项
地址