发明名称 METHOD FOR TESTING SEMICONDUCTOR DEVICE WITH BUILT-IN NON-VOLATILE MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for testing a semiconductor device with built-in non-volatile memory by which the production cost is reduced and the productivity is improved by shortening the test program renewal time. SOLUTION: The same memory as the memory data stored in a non-volatile memory is inputted to a tester (step 411) and this memory data is compiled to prepare the test response of the above non-volatile memory (421). This test response is taken into the test program to renew (step 431).</p>
申请公布号 JPH11126499(A) 申请公布日期 1999.05.11
申请号 JP19980209101 申请日期 1998.07.24
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHIN KISAN
分类号 G01R31/28;G01R31/3183;G11C29/00;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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