| 发明名称 |
ELECTRICALLY ERASABLE MEMORY |
| 摘要 |
FIELD: microelectronics. SUBSTANCE: electrically erasable variable-phase memory uses stoichiometrically balanced material. According to one option, it is of integrated design, in high home density configuration. Memory element is designed for direct regeneration at high change- over speed and low power requirement compared with its prototypes. EFFECT: reduced cost and improved performance characteristics. 28 cl, 9 dwg |
| 申请公布号 |
RU2130217(C1) |
申请公布日期 |
1999.05.10 |
| 申请号 |
SU19925010820 |
申请日期 |
1992.01.17 |
| 申请人 |
EHNERDZHI KONVERSHNZ DIVAJSIZ, INK. |
发明人 |
STEHNFORD R.OVCHINSKI;STEHFEN DZH.NADGENS;VLADIMIR CHUBATYJ;DEHVID A.STREHND;GAJ S.VIKER |
| 分类号 |
H01L27/10;G11C11/56;G11C16/02;H01H45/00;H01L21/8247;H01L27/105;H01L27/115;H01L27/24;H01L29/788;H01L29/792;H01L45/00;(IPC1-7):H01L45/00;G11C11/34 |
主分类号 |
H01L27/10 |
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