发明名称 |
Energy absorbing structures to prevent damage to an integrated circuit |
摘要 |
The present invention provides in one embodiment thereof an integrated circuit (IC). The IC includes a silicon substrate and a dielectric layer formed upon the silicon substrate. The IC further includes a terminal metal layer (TML) formed upon the dielectric layer. The dielectric layer and the TML form a die active area. The IC also includes a first guard ring formed out of the TML. The first guard encloses the die active area. Furthermore the IC includes a second guard ring formed out of the TML. The second guard ring encloses the first guard ring. |
申请公布号 |
AU8378498(A) |
申请公布日期 |
1999.04.23 |
申请号 |
AU19980083784 |
申请日期 |
1998.06.29 |
申请人 |
INTEL CORPORATION |
发明人 |
KRISHNA SESHAN;JEFFREY M. HICKS |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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