发明名称 |
Current control circuit and non-volatile semiconductor memory device having the same |
摘要 |
A current control circuit which controls currents flowing in memory cells in a non-volatile semiconductor memory device includes a circuit which controls the currents flowing in the memory cells in an erase operation so that amounts of the currents fall within a tolerable range.
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申请公布号 |
US5896319(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19970976575 |
申请日期 |
1997.11.24 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEHANA, KENICHI |
分类号 |
G11C16/02;G11C16/06;G11C16/16;G11C16/30;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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