发明名称 Current control circuit and non-volatile semiconductor memory device having the same
摘要 A current control circuit which controls currents flowing in memory cells in a non-volatile semiconductor memory device includes a circuit which controls the currents flowing in the memory cells in an erase operation so that amounts of the currents fall within a tolerable range.
申请公布号 US5896319(A) 申请公布日期 1999.04.20
申请号 US19970976575 申请日期 1997.11.24
申请人 FUJITSU LIMITED 发明人 TAKEHANA, KENICHI
分类号 G11C16/02;G11C16/06;G11C16/16;G11C16/30;(IPC1-7):G11C16/04 主分类号 G11C16/02
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