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发明名称
FAST DISTURB TEST OF SEMICONDUCTOR MEMORY DEVICE AND WORDLINE DECODER
摘要
申请公布号
KR0172350(B1)
申请公布日期
1999.03.30
申请号
KR19950064207
申请日期
1995.12.29
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SO, BYUNG-SE;SO, JIN-HO;KIM, WOO-SUB;LEE, DAL-JO
分类号
G11C11/401;G11C29/10;G11C29/50;(IPC1-7):G11C29/00
主分类号
G11C11/401
代理机构
代理人
主权项
地址
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