| 摘要 |
Disclosed herein is a pattern transfer method wherein a beam transmitting portion which transmits a charged particle beam and a beam limiting portion which scatters or absorbs the charged particle beam to a greater extent than the beam transmitting portion are disposed in a pattern area of a mask according to a pattern to be transferred onto a radiation-sensitive substrate. The pattern area is irradiated with the charged particle beam, and at least a part of the charged particle beam passing through the mask is led to the substrate to transfer the pattern onto the substrate. When the pattern area is irradiated with the charged particle beam, the dose of charged particle beam applied per unit area of the beam limiting portion is reduced to a quantity smaller than the dose of charged particle beam applied per unit area of the beam transmitting portion. Typically, the reduction of the dose is attained by disposing a dose control member between a charged particle beam radiation source and the mask, and projecting a dark image of a dose limiting portion of the dose control member onto the beam limiting portion of the mask.
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