| 摘要 |
The invention relates to a semiconductor device having a semiconductor substrate (1), on which a semiconductor layer (2) is provided, which comprises sunken or buried strip-shaped conducting regions (3), which comprise strip-shaped subregions (4), in which doping elements are present. Semiconductor devices having such so-called quasi unidimensional conductors constitute potentially important parts of electronic circuits or components. Known semiconductor devices having quasi unidimensional conductors are formed in that during the deposition of a semiconductor layer the incorporation of doping elements in strip-shaped subregions is ensured by means of an interference pattern of soft X-ray radiation projected onto the growing surface. This method has the disadvantage that it is comparatively complicated. Moreover, the lowest attainable widths of the subregions are approximately 2 to 10 nm, which is a great disadvantage. According to the invention, the strip-shaped conducting regions (3) and the strip-shaped subregions (4) are located with a side facing the substrate (1) substantially in one plane, which is a vicinal plane of a major crystal surface of the semiconductor body, of which the semiconductor device forms part. The subregions can also have a very small width and thickness of about 0.3 to 2 nm and can be manufactured in a comparatively simple manner. |
