发明名称 |
Silicon nitride sintered body, method of preparing the same and nitrided compact |
摘要 |
<p>Provided is a silicon nitride sintered body prepared through nitriding reaction of Si. The silicon nitride sintered body consists of crystal grains mainly composed of silicon nitride and/or SIALON and a grain phase, components forming the grain boundary phase consist of a first component including at least one element selected from a group of Na, K, Mg, Ca and Sr and a second component including at least one element selected from a group of Y and lanthanoid series elements, the molar ratio of the first component to the second component is in the range of 1:1 to 6:1 in terms of oxides, the mean breadth and the mean length of the crystal grains are not more than 0.1 mu m and not more than 3 mu m respectively, and the standard deviation of the mean length in the sintered body is within 1.5 mu m. <IMAGE></p> |
申请公布号 |
EP0901994(A2) |
申请公布日期 |
1999.03.17 |
申请号 |
EP19980307157 |
申请日期 |
1998.09.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIYANAGA, MICHIMASA;NAKAHATA, SEIJI;YAMAKAWA, AKIRA |
分类号 |
C04B35/591;C04B35/597;(IPC1-7):C04B35/591;C04B35/599 |
主分类号 |
C04B35/591 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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