Verfahren und Vorrichtung zum Messen elektrischer Eigenschaften von Halbleiterscheiben

摘要

A method of measuring C-V characteristics of a semiconductor wafer without forming an electrode on an oxide film thereof. An electrode 201 for C-V measurement is held above a semiconductor wafer 100 across a gap Ge of 1 micrometer or less, and a total capacity including that of the gap Ge is detected. The gap Ge is measured by utilizing the tunneling effect observed in total reflection of light wave. Parallelism of the electrode 201 to the wafer is adjusted by measuring the width of the gap or measuring the capacity of the gap at three different locations on the periphery of the electrode 201.