| 摘要 |
PROBLEM TO BE SOLVED: To extremely easily exfoliate a resist residue remained after dry etching and ashing with use of a reaction gas without corroding a wiring materials and the like, by using a cleaner for semiconductor device comprising a mix of each predetermined volume of water, fluorine compound, and water-soluble organic solvent. SOLUTION: The cleaner for semiconductor device is prepared by mixing by 0.1-10 wt.% fluorine compound, 50-80 wt.% water-soluble organic solvent, and total remnant of water. The actual example of the fluorine compound is expressed by a general formula R4 NF (R stands for hydrogen atom or 1-4C alkyl) and ammonium fluoride, hydrofluoric acid, ammonium acid fluoride, and the like are its typical example. The typical examples of the soluble organic solvent are formamide, monomethylformamide, dimethylfolmamide, and the like. A surface-active agent of cation, anion, nonion, and the like can be added to the cleaner for semiconductor device. |
